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Radiation and Thermal Cycling Effects on EPC1001 Gallium Nitride Power TransistorsElectronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed.
Document ID
20130001606
Document Type
Other
Authors
Patterson, Richard L. (NASA Glenn Research Center Cleveland, OH, United States)
Scheick, Leif Z. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lauenstein, Jean M. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Casey, Megan C. (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Hammoud, Ahmad (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 27, 2013
Publication Date
November 1, 2012
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN6780
E-18563
Funding Number(s)
WBS: WBS 724297.40.49.03.01
CONTRACT_GRANT: NNC12BA01B
Distribution Limits
Public
Copyright
Public Use Permitted.

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