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Reliability Concerns for Flying SiC Power MOSFETs in SpaceSiC power MOSFETs are space-ready in terms of typical reliability measures. However, single event burnout (SEB) often occurs at voltages 50% or lower than specified breakdown. Data illustrating burnout for 1200 V devices is reviewed and the space reliability of SiC MOSFETs is discussed.
Document ID
20180002439
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
External Source(s)
https://nepp.nasa.gov/
Authors
Galloway, K. F. (Vanderbilt Univ. Nashville, TN, United States)
Witulski, A. F. (Vanderbilt Univ. Hospital Nashville, TN, United States)
Schrimpf, R. D. (Vanderbilt Univ. Hospital Nashville, TN, United States)
Sternberg, A. L. (Vanderbilt Univ. Hospital Nashville, TN, United States)
Ball, D. R. (Vanderbilt Univ. Hospital Nashville, TN, United States)
Javanainen, A. (Jyvaskyla Univ. Finland)
Reed, R. A. (Vanderbilt Univ. Hospital Nashville, TN, United States)
Sierawski, B. D. (Vanderbilt Univ. Hospital Nashville, TN, United States)
Lauenstein, J-M (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
April 17, 2018
Publication Date
April 16, 2018
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GSFC-E-DAA-TN65899
GSFC-E-DAA-TN54861
Meeting Information
Meeting: 2018 HEART Hardened Electronics and Radiation Technology
Location: Tucson, AZ
Country: United States
Start Date: April 16, 2018
End Date: April 20, 2018
Sponsors: GuideStar USA, Inc.
Funding Number(s)
CONTRACT_GRANT: ESA-ESTEC-4000111630-14
CONTRACT_GRANT: NNX17AD09G
PROJECT: AOF 2513553
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
Single Expert
Keywords
Single-event burnout
Power MOSFET
Silicon carbide
Single-event effects

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