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Getting SiC Power Devices Off the Ground: Design, Testing, and Overcoming Radiation ThreatsHeavy-ion radiation effects knowledge across SiC power devices is examined and insights for more rugged designs and appropriate test methods geared toward space applications are extracted. The conclusions drawn are supported by recent publicly reported heavy-ion test results of a modified SiC MOSFET design.
Document ID
20180006113
Document Type
Presentation
Authors
Lauenstein, Jean-Marie (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
October 4, 2018
Publication Date
February 6, 2018
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
2018-561-NEPP
GSFC-E-DAA-TN59752
Meeting Information
Microelectronics Reliability and Qualification Working Meeting (MRQW)(El Segundo, CA)
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Technical Review
Single Expert
Keywords
MOSFETs
Single-event burnout (SEB)

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