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Modeling of Multi-Loops Related Device Turn-On Overvoltage in 3L-ANPC ConvertersThe analytical model for the device drain-source turn-on overvoltage in three-level active neutral point clamped (3L-ANPC) converters is established in this paper. Considering the two commutation loops in the converter, the relationship between the overvoltage and the loop inductances is evaluated. The line switching frequency device usually exhibits higher overvoltage, while the high switching frequency device is not strongly influenced by the multiple loops. A 500 kVA 3L-ANPC converter using SiC MOSFETs is tested, and the model is verified with the experimental results.
Document ID
20190027037
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Gui, Handong (Tennessee Univ. Knoxville, TN, United States)
Chen, Ruirui (Tennessee Univ. Knoxville, TN, United States)
Niu, Jiahao (Tennessee Univ. Knoxville, TN, United States)
Tolbert, Leon M. (Tennessee Univ. Knoxville, TN, United States)
Wang, Fred (Tennessee Univ. Knoxville, TN, United States)
Costinett, Daniel J. (Tennessee Univ. Knoxville, TN, United States)
Blalock, Benjamin J. (Tennessee Univ. Knoxville, TN, United States)
Choi, Benjamin B. (NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
July 3, 2019
Publication Date
June 17, 2019
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN68909
Meeting Information
Meeting: IEEE COMPEL 2019
Location: Toronto
Country: Canada
Start Date: June 17, 2019
End Date: June 20, 2019
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
CONTRACT_GRANT: NNC15AA01A
WBS: 081876.02.03.05.02.02.01
OTHER: EEC-1041877
Distribution Limits
Public
Copyright
Public Use Permitted.
Keywords
SiC MOSFET
State space
3L-ANPC converter

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