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Body of Knowledge (BOK): Gallium Nitride (GaN) Power Electronics for Space ApplicationsGallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This presentation summarizes a body of knowledge (BOK) document in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The presentation also discusses GaN's applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.



Document ID
20190033097
Document Type
Presentation
Authors
Boomer, Kristen (NASA Glenn Research Center Cleveland, OH, United States)
Scheick, Leif (Jet Propulsion Laboratory (JPL), California Institute of Technology (CalTech) Pasadena, CA, United States)
Hammoud, Ahmad (Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
November 19, 2019
Publication Date
June 16, 2019
Subject Category
Electronics and Electrical Engineering
Report/Patent Number
GRC-E-DAA-TN70017
Meeting Information
NASA Electronic Parts and Packaging Program Electronics Technology Workshop(Greenbelt, MD)
Funding Number(s)
WBS: 724297.40.49.03.01
CONTRACT_GRANT: NNC12BA01B
Distribution Limits
Public
Copyright
Public Use Permitted.

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