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Electrical Performance of a High Temperature 32-I/O HTCC Alumina PackageA high temperature co-fired ceramic (HTCC) alumina material was previously electrically tested at temperatures up to 550 C, and demonstrated improved dielectric performance at high temperatures compared with the 96% alumina substrate that we used before, suggesting its potential use for high temperature packaging applications. This paper introduces a prototype 32-I/O (input/output) HTCC alumina package with platinum conductor for 500 C low-power silicon carbide (SiC) integrated circuits. The design and electrical performance of this package including parasitic capacitance and parallel conductance of neighboring I/Os from 100 Hz to 1 MHz in a temperature range from room temperature to 550 C are discussed in detail. The parasitic capacitance and parallel conductance of this package in the entire frequency and temperature ranges measured does not exceed 1.5 pF and 0.05 microsiemens, respectively. SiC integrated circuits using this package and compatible printed circuit board have been successfully tested at 500 C for over 3736 hours continuously, and at 700 C for over 140 hours. Some test examples of SiC integrated circuits with this packaging system are presented. This package is the key to prolonged T greater than or equal to 500 C operational testing of the new generation of SiC high temperature integrated circuits and other devices currently under development at NASA Glenn Research Center.
Document ID
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Chen, Liang-Yu
(Ohio Aerospace Inst. Cleveland, OH, United States)
Neudeck, Philip G.
(NASA Glenn Research Center Cleveland, OH United States)
Spry, David J.
(NASA Glenn Research Center Cleveland, OH United States)
Beheim, Glenn M.
(NASA Glenn Research Center Cleveland, OH United States)
Hunter, Gary W.
(NASA Glenn Research Center Cleveland, OH United States)
Date Acquired
December 29, 2016
Publication Date
May 10, 2016
Subject Category
Electronics And Electrical Engineering
Avionics And Aircraft Instrumentation
Report/Patent Number
Meeting Information
Meeting: International Conference on High Temperature Electronics (HiTEC 2016)
Location: Albuquerque, NM
Country: United States
Start Date: May 10, 2016
End Date: May 12, 2016
Sponsors: International Microelectronics Assembly and Packaging Society (iMAPS)
Funding Number(s)
WBS: WBS 811073.
Distribution Limits
Public Use Permitted.
dielectric performance
High temperature
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