Mesoplasma Formation and Thermal Destruction in 4H-SiC Power MOSFET Devices under Heavy Ion Bombardment

Investigation into mesoplasma formation from heavy ion strike in 4H-SiC power MOSFETs. Simulations involving the time evolution of several parameters have determined that the formation of a mesoplasma occurs deep within the epi of the device. Various physical parameters were investigated, and only thermal conductivity affected mesoplasma formation.