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Recent Progress in Extreme Environment Durable SiC JFET-R Integrated Circuit TechnologyThis work updates recent progress made by NASA Glenn Research Center on further advancement of its uniquely durable silicon carbide junction field effect transistor and resistor (SiC JFET-R) integrated circuit (IC) technology since HiTEC 2021. Key fabrication process improvements compared to earlier NASA Glenn IC prototype runs have been ascertained via extensive “back end of line” (BEOL) processing experiments conducted on practice wafers over the past two years. The resulting changes to the BEOL process flow employed in the fabrication of “Generation 12” SiC JFET-R wafers are described. The NASA Glenn SiC JFET-R IC prototype “Generation 12” chipset design realizes significantly higher complexity digital and analog integrated ICs aimed at flexibly implementing a broad variety of mission-enabling extreme-environment electronics demonstrations. SPICE simulations have verified circuit designs ranging from simple amplification of analog sensor signals up through long-duration Venus lander operations and microprocessor-based of electric motor drive.
Document ID
20230005240
Acquisition Source
Glenn Research Center
Document Type
Presentation
Authors
Philip G. Neudeck
(Glenn Research Center Cleveland, Ohio, United States)
David J. Spry
(Glenn Research Center Cleveland, Ohio, United States)
Michael J. Krasowski
(Glenn Research Center Cleveland, Ohio, United States)
Carl W. Chang
(HX5, LLC)
José M. Gonzalez
(HX5, LLC)
Srihari Rajgopal
(Glenn Research Center Cleveland, Ohio, United States)
Norman F. Prokop
(Glenn Research Center Cleveland, Ohio, United States)
Lawrence C. Greer
(Glenn Research Center Cleveland, Ohio, United States)
Dorothy Lukco
(HX5, LLC)
Shamir Maldonado-Rivera
(Glenn Research Center Cleveland, Ohio, United States)
Christina M. Adams
(Glenn Research Center Cleveland, Ohio, United States)
Date Acquired
April 10, 2023
Subject Category
Electronics and Electrical Engineering
Solid-State Physics
Meeting Information
Meeting: International Conference and Exhibition on High Temperature Electronics (HiTEC)
Location: Albuquerque, NM
Country: US
Start Date: April 18, 2023
End Date: April 20, 2023
Sponsors: Materion (United States)
Funding Number(s)
WBS: 427922.04.10.01.03
Distribution Limits
Public
Copyright
Public Use Permitted.
Technical Review
NASA Technical Management
Keywords
Silicon Carbide
Integrated Circuit
JFET
Interconnect
SiC
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